PART |
Description |
Maker |
CXTA62 |
SMD Small Signal Transistor PNP Darlington SURFACE MOUNT PNP SILICON DARLINGTON TRANSISTOR
|
Central Semiconductor Corp
|
2N6648 2N6649 2N6650 JAN2N6650 JANTX2N6650 JANTXV2 |
PNP Darlington Transistor PNP DARLINGTON POWER SILICON TRANSISTOR
|
Microsemi Corporation
|
2N6298 JANTX2N6298 JANTX2N6299 JAN2N6298 JAN2N6299 |
PNP Darlington Transistor PNP DARLINGTON POWER SILICON TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
2N6301 JANTX2N6300 JANTX2N6301 JANTXV2N6301 2N6300 |
NPN Darlington Transistor PNP DARLINGTON POWER SILICON TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
CJD127 CJD127PNP CJD122 CJD122NPN CJD122-NPN |
SMD Bipolar Power Transistor NPN Darlington COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 互补性的芯片功率达林顿晶体管 From old datasheet system SMD Bipolar Power Transistor PNP Darlington
|
Central Semiconductor, Corp. Central Semiconductor Corp. CENTRAL[Central Semiconductor Corp]
|
CZT122 CZT127 |
SMD Bipolar Power Transistor PNP Darlington SMD Bipolar Power Transistor NPN Darlington SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR
|
Central Semiconductor Corp
|
2N999 ST640 ST646 FT359 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 500MA I(C) | CAN TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|达林顿|进步党| 80V的五(巴西)总裁| 10A条一(c)|3 TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
|
STMicroelectronics N.V.
|
BDW74C-S |
PNP DARLINGTON 100V 8A 8 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Bourns, Inc.
|
OC70 OC75 OC66 2N217 OC74 OC65 OC73 OC76 OC77 OC78 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 10MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 150MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 300MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 300MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 250MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-5 TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-5 68HC11/Bidirectional-Compatible µP Reset Circuit TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 18V的五(巴西)总裁| 500mA的一(c)|
|
APEM SA
|
CSB810 |
2.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 - 20000 hFE. TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220AB 晶体管|晶体管|达林顿|进步党| 110伏特五(巴西)总裁| 8A条一(c)| TO - 220AB现有
|
Continental Device India Limited Won-Top Electronics Co., Ltd.
|